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| top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 symbol parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w linear derating factor mw/c e as single pulse avalanche energency mj dv/dt peak diode recovery dv/dt v/ns t j, t stg junction and storage temperature range c symbol parameter typ max units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 v 2.5 max 30 20 13 thermal resistance ratings absolute maximum ratings c/w 9.2 5.0 0.02 260 -55 to +150 58 form quantity tube/bulk 95 IRF7413PBF-1 tape and reel 4000 irf7413trpbf-1 package type standard pack orderable part number IRF7413PBF-1 so-8 base part number features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 30 v r ds(on) max (@v gs = 10v) 0.011 q g (typical) 52 nc i d (@t a = 25c) 13 a !" !" ! "#$%& ''$&(%) ) % * +',- * ./+,-%0.123 ./+ %! ."#$ 4 / 5 #''( /6 478 * 1',- symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v . 0.0 0.011 0.01 1.0 .0 10 1 100 100 .1 . 1 . . 0 100 0 0 symbol parameter min. typ. max. units continuous source current (body diode) a pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 74 110 ns q rr reverse recovery charge ??? 200 300 nc i sm ??? ??? 58 i s i dss drain-to-source leakage current a i gss pf 3.1 ??? ??? na v gs = 4.5v, i d = 3.7a static drain-to-source on-resistance v gs = 10v, i d = 7.3a r ds(on) v ds = v gs , i d = 250 a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c mosfet symbol v ds = 10v, i d = 3.7a i d = 7.3a v ds = 24v conditions r g = 2.0 , . 10 v gs = 0v r g = 6.2 1.0, . , ., 0 t j = 25c, i f = 7.3a di/dt = 100a/ s showing the integral reverse p-n junction diode. electrical characteristics @ tj = 25c (unless otherwise specified) source-drain ratings and characteristics v gs = 10v, see fig. 6 and 9 v dd = 15v i d = 7.3a v gs = -20v v gs = 20v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma !" 1 10 100 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 7.3a d # !" 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms ! ! "# !$ % ! % ! 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 102030405060 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 7.3a v = 24v v = 15v d ds ds 1 10 100 0.4 1.2 2.0 2.8 3.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a $ !" 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) "# & ' ( )* $+ v ds 90% 10% v gs t d(on) t r t d(off) t f ! ! ,' ) ') 1 0.1 % ) ) 9:* + - - % ! ,' d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge ./ % ! % !" "# $' & ! 0 ( ' ,' 0 ( ' t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 3.3a 6.0a 7.3a & !" 1&2 & p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 3 ) .+) 0 09 ) ? & ? 9 9:* ? ! 94 ;9; ? 9:*79: * - 0 - ? 0 ! ? < 5 ? 00 = ! - * 3 ' !" so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx int ernat ional rectifier logo f7101 y = las t digit of t he ye ar part number lot code ww = we e k example: t his is an irf7101 (mosfet) p = designates lead-free product (optional) a = as s e mb l y s i t e code ! !" 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel ( dimensions are shown in milimeters (inches)) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ |
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